Deep levels and band bending at GaP(100) and (110) surfaces
- L.J. Brillson
- I.M. Vitomirov
- et al.
- 1994
- Surface Science
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21 results for D.T. McInturff
Photoemission spectroscopy of Al0.27Ga0.73As:As photodiodes
- D.T. McInturff
- J. Woodall
- et al.
- 1993
- Applied Physics Letters
Contactless electromodulation for in situ characterization of semiconductor processing
- X. Yin
- X. Guo
- et al.
- 1993
- Applied Surface Science
Doping concentration dependence of radiance and optical modulation bandwidth in carbon-doped Ga0.51In0.49P/GaAs light-emitting diodes grown by gas source molecular beam epitaxy
- T.J. De Lyon
- J. Woodall
- et al.
- 1992
- Applied Physics Letters
Photoemission spectroscopy of GaAs:As photodiodes
- D.T. McInturff
- J. Woodall
- et al.
- 1992
- Applied Physics Letters
Performance of In0.53Ga0.47As metal-semiconductor-metal photodetectors at 1.55 μm
- F. Tong
- D.T. McInturff
- et al.
- 1992
- LEOS 1992
High-frequency operation of heavily carbon-doped Ga0.51In 0.49P/GaAs surface-emitting light-emitting diodes grown by metalorganic molecular beam epitaxy
- T.J. De Lyon
- J. Woodall
- et al.
- 1991
- Applied Physics Letters
Optoelectronic applications of GaAs epilayers containing arsenic precipitates
- Alan C. Warren
- J. Woodall
- et al.
- 1991
- IEE/LEOS Summer Topical Meetings 1991
Use of CCl4 and CHCl3 in gas source molecular beam epitaxy for carbon doping of GaAs and GaxIn1-xP
- T.J. de Lyon
- N.I. Buchan
- et al.
- 1991
- Journal of Crystal Growth
GaAs sees the light
- J. Woodall
- Alan C. Warren
- et al.
- 1991
- IEEE T-ED