A.W. Kleinsasser, T.N. Jackson, et al.
IEEE T-ED
Summary form only given. Reported are p-i-n photodetectors using GaAs with As precipitates (GaAs) that detect 1.3-μm light with reasonable efficiency. Since high-performance GaAs electronic circuits can be epitaxially grown on GaAs, this work may open the way for an all-GaAs 1.3-μm optical receiver chip. In the GaAs p-i-n devices, the i layer was a 1-μm-thick layer of GaAs. MSM structures with GaAs as the optically active material were also made.
A.W. Kleinsasser, T.N. Jackson, et al.
IEEE T-ED
X. Yin, X. Guo, et al.
Applied Surface Science
G. Shahidi, J. Warnock, et al.
VLSI Technology 1993
J. Woodall, H.J. Hovel
Solar Cells