Ruqiang Bao, K. Watanabe, et al.
VLSI Technology 2020
Conference paper
Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor
Abstract
In this paper, we report the bias temperature instability (BTI) reliability in stacked gate-all-around (GAA) nanosheet (NS) devices. We show that, in addition to its superior intrinsic performance over FinFET and stacked nanowire (NW), stacked NS can also provide NBTI reliability benefit, owing to domination of (100) surface conduction and mitigation of field enhancement effect in ultra-scaled GAA structure.
Related
Miaomiao Wang, Sufi Zafar, et al.
Microelectronic Engineering
Narendra Parihar, Richard G. Southwick, et al.
IEEE T-ED
Tian Shen, K. Watanabe, et al.
IRPS 2020