A 0.123 mW 7.25 GHz Static Frequency Divider by 8 in a 120-nm SOI Technology

Jean-Olivier Plouchart; Jonghae Kim; Hector Recoules; Noah Zamdmer; Yue Tan; Melanie Sherony; Asit Ray; Lawrence Wagner

doi:10.1145/871613.871615

ISLPED 2003

Conference paper

25 Aug 2003

A 0.123 mW 7.25 GHz Static Frequency Divider by 8 in a 120-nm SOI Technology

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Abstract

A static frequency divider by 8 was fabricated in a 120 nm SOI technology. The highest operation frequency achieved is 8.25 GHz at 1.5 V power supply. The lowest core power consumption achieved is 0.016 mW at 4 GHz when the lowest operating voltage supply of 0.75 V is used.

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Understanding and minimizing ground bounce during mode transition of power gating structures

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