TA-A3 Retention Time Studies in Buried-Channel MOSFET Dynamic-Memory DevicesH.H. ChaoR.P. Havreluk1980IEEE T-ED
TP-A6 The Behavior of Schottky Barriers to GaAs as a function of Annealing TemperatureH.J. HovelC. Lanza1980IEEE T-ED
Effects of Impurity Compensation on Injection Current in Si Bipolar TransistorsD.D. TangAlwin E. Michel1980IEEE T-ED
Partially Coherent Imaging in Two Dimensions and the Theoretical Limits of Projection Printing in MicrofabricationBurn Jeng Lin1980IEEE T-ED
High-Reliability Pb-Alloy Josephson Junctions for Integrated CircuitsH.-C. Ward HuangSuryadevar Basavaiahet al.1980IEEE T-ED
TP-A3 Capless Annealing of GaAs Using a Controlled Excess as Vapor Pressure SourceH. RupprechtJ. Woodall1980IEEE T-ED
Effect of Emitter Contact on Current Gain of Silicon Bipolar DevicesTak H. NingRandall D. Isaac1980IEEE T-ED
Dependence of Electroluminescence Efficiency and Memory Effect on Mn Concentration in ZnS: Mn ACTEL DevicesV. MarrelloAare Onton1980IEEE T-ED
A Study of the Conversion Efficiency Limit of p+-i-n+ Silicon Solar Cells in Concentrated SunlightTerry I. Chappell1980IEEE T-ED