PaperHighly carbon-doped p-type Ga0.5In0.5As and Ga 0.5In0.5P by carbon tetrachloride in gas-source molecular beam epitaxyT.P. Chin, P.D. Kirchner, et al.Applied Physics Letters
PaperGeometric ordering, surface chemistry, band bending, and work function at decapped GaAs(100) surfacesI.M. Vitomirov, A. Raisanen, et al.Physical Review B
Conference paperCharacterization of mev ion-implanted gainas/gaas using x-ray and raman techniquesChu R. Wie, K. Xie, et al.Proceedings of SPIE 1989
PaperEffect of iso-electronic dopants on the dislocation density of GaAsG.M. Blom, J. WoodallJournal of Electronic Materials
