Publications

12 results at VLSI Technology 2009

Increasing threshold voltage variation due to random telegraph noise in FETs as gate lengths scale to 20 nm
- - N. Tega
  - H. Miki
  - et al.
- 2009
- VLSI Technology 2009
Reliability of a 300-mm-compatible 3DI technology based on hybrid Cu-adhesive wafer bonding
- - R.R. Yu
  - F. Liu
  - et al.
- 2009
- VLSI Technology 2009