Use of electron-beam irradiation to study performance degradation of bipolar transistors after reverse-bias stressKeith A. JenkinsJ.D. Cressleret al.1991IEDM 1991
Lateral p-i-n photodetectors with 18 GHz bandwidth at 1.3 μ m wavelength and small bias voltagesSandip TiwariJeremy Burrougheset al.1991IEDM 1991
Single crystal emitter gap for epitaxial Si- and SiGe-base transistorsJ.H. ComfortE.F. Crabbeet al.1991IEDM 1991
A high-speed silicon metal-semiconductor-metal photodetector fully integrable with (Bi)CMOS circuitsE. BassousM. Scheuermannet al.1991IEDM 1991