Publication
IEDM 1991
Conference paper

High performance 0.25 mu m p-MOSFETs with silicon-germanium channels for 300 K and 77 K operation

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Abstract

Quarter-micron Si1-xGex p-MOS devices with either thermal or PECVD oxides have been fabricated using an integrable process module (LOCOS isolation, threshold and deep well implants, p+ polysilicon gates, and TiSi2) compatible with conventional 0.25 mu m CMOS with the Si1-xGex channel and Si cap deposited by selective UHV-CVD. Improvements in mobility and transconductance over deep submicron (0.25 mu m channel length) state-of-The-Art Si p-MOSFETs were demonstrated by using silicon-germanium channels with low (10-25%) germanium content, both at room temperature (300 K) and low temperature (82 K). The use of Si1-xGex channels can provide better device performance in the same technology generation (same lithography, junction depth, etc.) and also help compensate for the external parasitic resistance penalty.

Date

Publication

IEDM 1991