Formation of amorphous silicon by ion bombardment as a function of ion, temperature, and dose
- F.F. Morehead
- B.L. Crowder
- et al.
- 2003
- Journal of Applied Physics
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37 results for Billy L. Crowder
Defining the "random" spectrum as used in the channeling technique of nuclear backscattering
- J.F. Ziegler
- B.L. Crowder
- 2003
- Applied Physics Letters
Elastic and anelastic behavior of ion-implanted silicon
- S.I. Tan
- B.S. Berry
- et al.
- 2003
- Applied Physics Letters
ESR and optical absorption studies of ion-implanted silicon
- B.L. Crowder
- R.S. Title
- et al.
- 2003
- Applied Physics Letters
Circular etch pits in ion-implanted amorphous silicon films
- K.N. Tu
- S.I. Tan
- et al.
- 2003
- Applied Physics Letters
Range distribution of implanted ions in SiO2, Si 3N4, and Al2O3
- W.K. Chu
- B.L. Crowder
- et al.
- 2003
- Applied Physics Letters
Boron atom distributions in ion-implanted silicon by the (n,4He) nuclear reaction
- J.F. Ziegler
- B.L. Crowder
- et al.
- 2003
- Applied Physics Letters
Manufacturing science and manufacturing competitiveness
- B.L. Crowder
- 1989
- ISMSS 1989
Manufacturing technology and the role of manufacturing research
- Albert J. Blodgett
- B.L. Crowder
- 1987
- International Electronic Manufacturing Technology Symposium 1987
SUB-MICRON SILICON BIPOLAR TECHNOLOGY.
- B.L. Crowder
- 1985
- ICCD 1985