Valence band Landau level mixing and anisotropy in Si1-xGex investigated by resonant magnetotunneling
- A. Zaslavsky
- D.A. Grützmacher
- et al.
- 1994
- Surface Science
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
Date
Featured collections
Popular topics
71 results for T.O. Sedgwick
Cyclotron resonance studies of two-dimensional holes in strained Si 1-xGex/Si quantum wells
- J.-P. Cheng
- V.P. Kesan
- et al.
- 1993
- Applied Physics Letters
Ge segregation in SiGe/Si heterostructures and its dependence on deposition technique and growth atmosphere
- D.A. Grützmacher
- T.O. Sedgwick
- et al.
- 1993
- Applied Physics Letters
In-plane valence-band nonparabolicity and anisotropy in strained Si-Ge quantum wells
- A. Zaslavsky
- T.P. Smith III
- et al.
- 1993
- Physical Review B
Observation of valence-band Landau-level mixing by resonant magnetotunneling
- A. Zaslavsky
- D.A. Grützmacher
- et al.
- 1993
- Physical Review B
Growth of SiGe/Si quantum well structures by atmospheric pressure chemical vapor deposition
- D.A. Grützmacher
- T.O. Sedgwick
- et al.
- 1993
- Journal of Electronic Materials
Growth Rate Enhancement of Heavy n- and P-Type Doped Silicon Deposited by Atmospheric-Pressure Chemical Vapor Deposition at Low Temperatures
- P. Agnello
- T.O. Sedgwick
- et al.
- 1993
- JES
Effects of Trace Surface Oxidation in Low Temperature Epitaxy Grown from Dichlorosilane
- T.O. Sedgwick
- P. Agnello
- et al.
- 1993
- JES
Heavy arsenic doping of silicon grown by atmospheric-pressure chemical vapor deposition at low temperatures
- P. Agnello
- T.O. Sedgwick
- et al.
- 1992
- Applied Physics Letters
Selective growth of Si/SiGe resonant tunneling diodes by atmospheric pressure chemical vapor deposition
- A. Zaslavsky
- D.A. Grützmacher
- et al.
- 1992
- Applied Physics Letters