Low temperature selective epitaxial growth of silicon at atmospheric pressure in an ultra-clean system

Epitaxial silicon has been deposited selectively in an atmospheric pressure system at temperatures from 850°C down to 600°C. Si was deposited by the hydrogen reduction of dichlorosilane in an ultra-clean system using a load lock and purified gases. Water and oxygen impurities in the hydrogen carrier gas were found to block or degrade epitaxial growth when not removed by a purifier. The growth rate at 750°C is 16 nm/min and it is strongly activated with temperature.