U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
The oxidation and removal of surface oxides on silicon at low temperatures in an atmospheric-pressure chemical vapor deposition system has been studied. Oxygen concentrations from 5 ppb to 6 ppm and temperatures from 650 to 850°C were investigated. The oxygen pressure limits to maintaining an oxide-free surface are higher than for vacuum processing due to mass transport of oxygen in the carrier gas. © 1991, The Electrochemical Society, Inc. All rights reserved.
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
K.A. Chao
Physical Review B
R. Ghez, J.S. Lew
Journal of Crystal Growth
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings