Uniaxial stress dependence of current-voltage characteristics in GaAs-AlxGa1-xAs-GaAs heterojunction barriers
- S.S. Lu
- K. Lee
- et al.
- 1989
- Applied Physics Letters
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72 results for Marshall I. Nathan
Electron mobility in p-type GaAs
- M.I. Nathan
- W.P. Dumke
- et al.
- 1988
- Applied Physics Letters
Pressure-dependent studies of the DX centre in Si- and Sn-doped n+GaAs
- J.C. Portal
- D.K. Maude
- et al.
- 1988
- Superlattices and Microstructures
DX centers in AlGaAs p-n heterojunctions and heterojunction bipolar transistors
- M.I. Nathan
- S. Tiwari
- et al.
- 1987
- Journal of Applied Physics
Investigation of the DX center in heavily doped n-GaAs
- D.K. Maude
- J.C. Portal
- et al.
- 1987
- Physical Review Letters
Barrier heights and electrical properties of intimate metal-AlGaAs junctions
- M. Eizenberg
- M. Heiblum
- et al.
- 1987
- Journal of Applied Physics
Invention of the Injection Laser at IBM
- Marshall I. Nathan
- 1987
- IEEE JQE
Energy band discontinuities in heterojunctions measured by internal photoemission
- M. Heiblum
- M.I. Nathan
- et al.
- 1986
- Surface Science
Trapping in AlGaAs/GaAs modulation-doped field effect transistors at room temperature
- M.I. Nathan
- P.M. Mooney
- et al.
- 1986
- Surface Science
Tunnelling hot electron transfer amplifiers (THETA): Ballistic GaAs devices with current gain
- M. Heiblum
- D.C. Thomas
- et al.
- 1986
- Surface Science