William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
Shubnikov-de Haas and persistent photoconductivity measurements are used to study the effect of hydrostatic pressure on the free electron concentration, mobility, and the occupancy of the DX centre in MBE grown n+GaAs heavily doped with either Si or Sn. The results show that the DX centre produces a resonant donor level between the Γ- and L- conduction band minima at a concentration comparable with the doping level. The position and occupancy of the DX centre are calculated using Fermi-Dirac statistics. For the Si-doped samples comparison with local vibrational mode measurements indicate that the DX level can be identified with SiGa. © 1988.
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
Robert W. Keyes
Physical Review B
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters