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Higher hole mobility induced by twisted Direct Silicon Bonding (DSB)M. HamaguchiH. Yinet al.2008VLSI Technology 2008
On implementation of embedded Phosphorus-doped SiC stressors in SOI nMOSFETsZhibin RenG. Peiet al.2008VLSI Technology 2008
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Scalability of Direct Silicon Bonded (DSB) technology for 32nm node and beyondHaizhou YinC.Y. Sunget al.2007VLSI Technology 2007
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(110) Channel, SiON gate-dielectric PMOS with record high Ion=1 mA/μm through channel stress and source drain external resistance (R ext) engineeringB. YangA. Waiteet al.2007IEDM 2007
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Robust TaN x diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer depositionH. KimC. Detavenieret al.2005Journal of Applied Physics