Conference paperUltra-thin Body and BOX (UTBB) device for aggressive scaling of CMOS technologyQ. Liu, A. Yagishita, et al.CSTIC 2011
PaperDual layer SrTiO3/HfO2 gate dielectric for aggressively scaled band-edge nMOS devicesC. Choi, E. Cartier, et al.Microelectronic Engineering
Conference paperBand edge high-K /metal gate n-MOSFETs using ultra thin capping layersV.K. Paruchuri, V. Narayanan, et al.VLSI-TSA 2007
Conference paperRecent progress in devices and materials for CMOS technologyH.-S. Philip Wong, B. Doris, et al.VLSI-TSA 2003