Extendibility of NiPt silicide to the 22-nm node CMOS technology
- Kazuya Ohuchi
- Christian Lavoie
- et al.
- 2008
- IWJT 2008
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164 results for Paul Solomon
An n-FET with a Si nanowire channel and doped epitaxially-thickened source and drain regions
- G.M. Cohen
- P. Solomon
- et al.
- 2007
- DRC 2007
Simulation study of a metal / high-κ gate stack for low-power applications
- Arvind Kumar
- Paul M. Solomon
- 2006
- SISPAD 2006
Thirty years of Monte Carlo simulations of electronic transport in semiconductors: Their relevance to science and to mainstream VLSI technology
- Massimo V. Fischetti
- Steven E. Laux
- et al.
- 2004
- IWCE 2004
The ballistic FET with a current injector
- P. Solomon
- 2003
- Physica E: Low-Dimensional Systems and Nanostructures
A self-aligned silicide process utilizing ion implants for reduced silicon consumption and control of the silicide formation temperature
- G.M. Cohen
- C. Cabral Jr.
- et al.
- 2002
- MRS Proceedings 2002
A self-aligned silicide process for thin silicon-on-insulator MOSFETs and bulk MOSFETs with shallow junctions
- G.M. Cohen
- C. Cabral Jr.
- et al.
- 2001
- MRS Proceedings 2001
Mixed mode double-gate FET model
- P. Solomon
- 2001
- DRC 2001
Sub-40nm V-groove MOSFETs
- J. Appenzeller
- R. Martel
- et al.
- 2001
- DRC 2001
Technology for the fabrication of ultrashort channel metal–oxide–semiconductor field-effect transistors
- J. Knoch
- J. Appenzeller
- et al.
- 2001
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films