Extendibility of NiPt silicide contacts for CMOS technology demonstrated to the 22-nm node

Abstract

This paper shows ultra-low contact resistivities with standard NiPt silicide process that can reach below 10-8 Ω-cm2 for both n+ and p+ Si and demonstrates that NiPt silicide can fulfill CMOS technology requirements down to the ITRS 22nm node. © 2007 IEEE.