Publications

131 results for J. Warnock

12.8-ps/l.O-mW Charge-Buffered Active-Pull-Down NTL Circuit
- - Kenneth Chin
  - Ching-Te Chuang
  - et al.
- 1992
- IEEE Journal of Solid-State Circuits
A Scaled 0.25- μm Bipolar Technology Using Full e-Beam Lithography
- - John D. Cressler
  - James Warnock
  - et al.
- 1992
- IEEE Electron Device Letters
14.9 ps/2.2 mW charge-buffered active-pull-down ECL circuit
- - Ken Chin
  - C.T. Chuang
  - et al.
- 1992
- Electronics Letters
Identification Of Perimeter Depletion And Emitter Plug Effects In Deep-Submicrometer, Shallow-Junction Polysilicon Emitter Bipolar Transistors
- - Joachim N. Burghartz
  - Jack Yuan-Chen Sun
  - et al.
- 1992
- IEEE T-ED
IIA-3 p⁺ Polysilicon Emitters for Sub-0.5 µm High-Performance p-n-p
- - J. Warnock
  - J.Y.-C. Sun
  - et al.
- 1992
- IEEE T-ED
Spin superlattice formation in ZnSe-based diluted magnetic semiconductor heterostructures
- - B.T. Jonker
  - W.C. Chou
  - et al.
- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Spin superlattice behavior in ZnSe/Zn0.99Fe0.01Se quantum wells
- - W.C. Chou
  - A. Petrou
  - et al.
- 1991
- Physical Review Letters
A full E-beam 0.25 mu m bipolar technology with sub-25 ps ECL gate delay
- - J. Warnock
  - J.D. Cressler
  - et al.
- 1991
- IEDM 1991
Use of electron-beam irradiation to study performance degradation of bipolar transistors after reverse-bias stress
- - Keith A. Jenkins
  - J.D. Cressler
  - et al.
- 1991
- IEDM 1991
Profile scaling constraints for ion-implanted and epitaxial bipolar technology designed for 77 K operation
- - John D Cressler
  - Emmanuel F Crabe
  - et al.
- 1991
- IEDM 1991