R.V. Joshi, F. Yee, et al.
IEEE International SOI Conference 2002
An ECL circuit with a charge-buffered active-pull-down emitter-follower stage is described. Implemented in a 0-8 /an double-poly trench-isolated selfaligned bipolar process, unloaded gate delays of 14.9ps/2.2mW, 20.7ps/1.2mW, and 24.5ps/0.77mW have been achieved. © 1992, The Institution of Electrical Engineers. All rights reserved.
R.V. Joshi, F. Yee, et al.
IEEE International SOI Conference 2002
K. Kim, K. Das, et al.
International Journal of Electronics
J. Warnock, J.D. Cressler, et al.
IEEE Electron Device Letters
D.D. Awschalom, J. Warnock
Physical Review B