1.3-μm P-I-N Photodetector using GaAs with As Precipitates (Gaas:As)
- Alan C. Warren
- J.H. Burroughes
- et al.
- 1991
- IEEE Electron Device Letters
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21 results for D.T. McInturff
Carbon doping of GaP, GalnP, and AlinP in metalorganic molecular beam epitaxy using methyl and ethyl precursors
- T.J. De Lyon
- J. Woodall
- et al.
- 1991
- Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
IVA-5 GaAs Sees THE Light
- M.R. Melloch
- Alan C. Warren
- et al.
- 1991
- IEEE T-ED
Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxy
- Alan C. Warren
- J. Woodall
- et al.
- 1990
- Applied Physics Letters
Crossover from tunneling to metallic behavior in superconductor- semiconductor contacts
- A.W. Kleinsasser
- T.N. Jackson
- et al.
- 1990
- Applied Physics Letters
Superconducting InGaAs junction field-effect transistors with Nb electrodes
- A.W. Kleinsasser
- T.N. Jackson
- et al.
- 1989
- Applied Physics Letters
InGaAs superconducting JFET's with Nb electrodes
- A.W. Kleinsasser
- T.N. Jackson
- et al.
- 1989
- IEEE T-ED
VIB-1 InGaAs Superconducting JFET's with Nb Electrodes
- A.W. Kleinsasser
- T.N. Jackson
- et al.
- 1989
- IEEE T-ED
Highspeed 1.3-μm GalnAs Detectors Fabricated on GaAs Substrates
- Dennis L. Rogers
- Jerry M. Woodall
- et al.
- 1988
- IEEE Electron Device Letters
Masked, anisotropic thermal etching and regrowth for in situ patterning of compound semiconductors
- Alan C. Warren
- J. Woodall
- et al.
- 1987
- Applied Physics Letters