S.J. Wind, J. Appenzeller, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
We have fabricated single-wall carbon nanotube field-effect transistors (CNFETs) in a conventional metal-oxide-semiconductor field-effect transistor (MOSFET) structure, with gate electrodes above the conduction channel separated from the channel by a thin dielectric. These top gate devices exhibit excellent electrical characteristics, including steep subthreshold slope and high transconductance, at gate voltages close to 1 V - a significant improvement relative to previously reported CNFETs which used the substrate as a gate and a thicker gate dielectric. Our measured device performance also compares very well to state-of-the-art silicon devices. These results are observed for both p- and n-type devices, and they suggest that CNFETs may be competitive with Si MOSFETs for future nanoelectronic applications. © 2002 American Institute of Physics.
S.J. Wind, J. Appenzeller, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
C.-K. Hu, N.J. Mazzeo, et al.
Thin Solid Films
J. Knoch, M. Zhang, et al.
Applied Physics A: Materials Science and Processing
Y.-M. Lin, J. Appenzeller, et al.
DRC 2004