L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
CNFETs were fabricated in a top gate construction. The thin dielectric offered improved electrical performance relative to substrate-gated CNFETs with thicker gate dielectrics, at a fraction of the gate voltage. The top gate structure also offered individual switchability, as well as stable n-FET and p-FET devices, enabling the possibility of future CMOS CNFET circuits.
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Imran Nasim, Melanie Weber
SCML 2024
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
Frank Stem
C R C Critical Reviews in Solid State Sciences