Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
An overview of our recent work on ultrathin (<100 Å) films of metal oxides deposited on silicon for advanced gate dielectrics applications will be presented. Data on ultrathin Al2O3, ZrO2, HfO2, and Y2O3 will be shown to illustrate the complex processing, integration and device-related issues for high dielectric constant ('high-K') materials. Both physical and electrical properties, as well as the effects of pre- and post-deposition treatments will be discussed. © 2001 Elsevier Science B.V. All rights reserved.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
T.N. Morgan
Semiconductor Science and Technology
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME