K. Jain, J.I. Crowley, et al.
Optics and Laser Technology
The use of high-power pulsed excimer lasers for photolithography is described for the first time. Short exposure times, high resolution and absence of speckle are experimentally demonstrated. Using a XeC1 laser at 308 nm and a KrF laser at 248 nm, excellent quality images are obtained by contact printing in two positive photoresists. Resolution down to 1000 line-pairs/mm is demonstrated. These images are comparable to state-of-the-art lithography done with conventional lamps; the major difference is that the excimer laser technique is ∼2 orders of magnitude faster. Preliminary results on reciprocity behavior in several resists are also presented. Copyright © 1982 by The Institute of Electrical and Electronics Engineers, Inc.
K. Jain, J.I. Crowley, et al.
Optics and Laser Technology
R.J. Twieg, A. Azema, et al.
Chemical Physics Letters
R.J. Twieg, K. Jain
ACS National Meeting 1982
K. Jain, B.J. Lin
Proceedings of SPIE 1989