N.C. Yeh, K.N. Tu, et al.
Physical Review B
Contact reaction and Schottky barrier heights on Si were studied using Ti-W alloys of increasing W concentration (Ti, Ti8W2, Ti 4W6, Ti2W8) in order to determine the effect of alloy composition on Schottky contact behavior. Glancing angle x-ray diffraction, Rutherford backscattering spectroscopy, and scanning electron microscopy were used to analyze the contact reaction. Schottky barrier heights were determined from the I-V behavior of circular diodes. Four-point probe measurements were used to compute the film electrical resistivity. Our experiments show that the addition of small amounts of W has raised the formation temperature of Ti silicides and maintained a low barrier height (∼0.55 eV) Schottky contact on n-type Si up to 550 °C. A bilayer shallow contact metallurgy Si/Ti8W2/Ti3 W 7/Al which provides a low barrier metal contact to n-type Si as well as an effective diffusion barrier between Al and Si is proposed as a result of this study.
N.C. Yeh, K.N. Tu, et al.
Physical Review B
H. Föll, P.S. Ho, et al.
Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
R.D. Thompson, K.N. Tu
Applied Physics Letters
J.J. Chu, L.J. Chen, et al.
Journal of Applied Physics