P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
The experimental data of crystallization of amorphous Si thin films on single crystal Si substrates and on inert substrates have been analysed by a kinetic model of phase transformation. On the basis of the analysis, the interfacial energy between amorphous Si and crystalline Si has been calculated to be about 0.30 eV/atom and the number of Si atoms in the critical nucleus to be about 110. © 1991 Springer-Verlag.
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
T. Schneider, E. Stoll
Physical Review B
M. Hargrove, S.W. Crowder, et al.
IEDM 1998