G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
The experimental data of crystallization of amorphous Si thin films on single crystal Si substrates and on inert substrates have been analysed by a kinetic model of phase transformation. On the basis of the analysis, the interfacial energy between amorphous Si and crystalline Si has been calculated to be about 0.30 eV/atom and the number of Si atoms in the critical nucleus to be about 110. © 1991 Springer-Verlag.
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Julien Autebert, Aditya Kashyap, et al.
Langmuir
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters