Ernest Wu, Baozhen Li, et al.
IRPS 2019
Using a quantum mechanical calculation, we investigate the fundamental limitations of the Schottky emission (SE) model for its applications to electron injection into dielectrics from a metal or semiconductor electrode. This work covers a wide range of electric fields from 0.01 to 10 MV/cm and a large temperature span with many barrier height values (φB). We conclude that the SE model is only applicable for a very small class of dielectrics under 0.1 MV/cm and at high temperatures over ∼330 K. For many defective dielectrics with large barrier heights (φB ≥ ∼1.5 eV) in back-of-line/middle-of-line/metal-insulator-metal capacitor applications, the corresponding electric fields for the measurable currents far exceed 0.1 MV/cm, and up to 10 MV/cm, the application of the SE model is likely invalid so that the extracted φB values may not be correct. We provide a quantitative guide to avoid future misapplications of the SE model.
Ernest Wu, Baozhen Li, et al.
IRPS 2019
Ernest Y. Wu, Baozhen Li, et al.
IEDM 2014
Huimei Zhou, Miaomiao Wang, et al.
IRPS 2021
Ernest Y. Wu, Andrew Kim, et al.
IEDM 2017