Sunil Shukla, Bruce Fleischer, et al.
IEEE SSC-L
This paper describes the first realization of a reduced-field design concept for advanced bipolar devices using the low-temperature epitaxial (LTE) technique to form the base layer. By inserting a lightly doped collector (LDC) spacer layer between the heavily doped base and collector regions, we have successfully demonstrated that the collector-base (CB) junction avalanche multiplication can be reduced substantially while maintaining high collector doping for current density consideration. Similar applications of the LDS technique to the emitter-base (EB) junction also result in a lower electric field, thus less EB junction reverse leakage. © 1990 IEEE
Sunil Shukla, Bruce Fleischer, et al.
IEEE SSC-L
Hua Xiang, Haifeng Qian, et al.
DAC 2014
Denny D. Tang, R.E. Burger
IEEE Journal of Solid-State Circuits
Pong-Fei Lu, G.P. Li, et al.
IEEE Electron Device Letters