Conference paperFinFET performance with Si:P and Ge:Group-III-Metal metastable contact trench alloysOleg Gluschenkov, Zuoguang Liu, et al.IEDM 2016
Conference paperContact Cavity Shaping and Selective SiGe:B Low-Temperature Epitaxy Process Solution for sub 10-9 Ω.cm2 Contact Resistivity in Nonplanar FETsN. Breil, B.-C. Lee, et al.VLSI Technology 2023
PaperIntrinsic effective mobility extraction with extremely scaled gate dielectricsZuoguang Liu, Dechao Guo, et al.Applied Physics Letters
Conference paperFinFET performance with Si:P and Ge:Group-III-Metal metastable contact trench alloysOleg Gluschenkov, Zuoguang Liu, et al.IEDM 2016
