Publication
ASMC 2020
Conference paper

Energy density and temperature calibration for feol nanosecond laser annealing

View publication

Abstract

Nanosecond (NLA) laser annealing is under consideration for inclusion into mainstream CMOS technology. Lack of suitable ultra-high speed pyrometery and the complexity of determining surface temperature of patterned, nanostructured wafers poses unique challenges in tool monitoring and process setup. This work sets a methodology of calibrating the incident energy density (ED) at the wafer plane and the surface temperature for blanket and pattern wafers. The melting of undoped crystalline silicon (c-Si) at 141°C and that of the transistor channel were used as reference points for blanket and patterned wafers, respectively. Laser-induced epitaxial re-growth of amorphized layers and pockets and the melting of the pFET SiGe source/drain (S/D) were used to show consistency between the calibrated incident ED and predicted surface temperature. This methodology allows for reliable annealing process setup and adequate periodic tool monitoring and matching.

Date

Publication

ASMC 2020

Authors

Share