J.B. Hannon, F.-J. Meyer zu Heringdorf, et al.
Physical Review Letters
Silicon surfaces which had been exposed to a CF4 /H2 plasma have been characterized by x-ray photoelectron spectroscopy, ellipsometry, He ion channeling, and H profiling techniques. Plasma exposure leads to the deposition of a thin (∼30 Å thick) C,F-polymeric layer. Hydrogen and/or damage (displaced Si atoms) can be detected in the near-surface region up to a depth in excess of 400 Å from the Si surface.
J.B. Hannon, F.-J. Meyer zu Heringdorf, et al.
Physical Review Letters
Y.H. Lee, P.R. Brosious, et al.
physica status solidi (a)
M. Poppeller, E. Cartier, et al.
Applied Physics Letters
M. Poppeller, E. Cartier, et al.
Microlithography 1999