Conference paperA comparative study of strain and Ge content in Si1-xGex channel using planar FETs, FinFETs, and strained relaxed buffer layer FinFETsChoonghyun Lee, Shogo Mochizuki, et al.IEDM 2017
Conference paperPrecession Electron Diffraction (PED) Strain Characterization in Stacked Nanosheet FET StructureJuntao Li, Shogo Mochizuki, et al.ISTFA 2022
PaperHigh-precision deformation mapping in finFET transistors with two nanometre spatial resolution by precession electron diffractionDavid Cooper, N. Bernier, et al.Applied Physics Letters
Conference paperTechnology viable DC performance elements for Si/SiGe channel CMOS FinFTTG. Tsutsui, Ruqiang Bao, et al.IEDM 2016
