Ruqiang Bao, Brian Greene, et al.
IEDM 2015
We report switching performance of perpendicularly magnetized Spin-Transfer Torque MRAM (STT-MRAM) devices with double tunnel barriers and two reference layers. We show that stacks with double tunnel barriers improve the switching efficiency (Eb/Ic0) by 2x, when compared to similar stacks with a single tunnel barrier. Switching efficiency up to 10 kBT/uA was observed in single devices. A large operating window, Vbreakdown-Vc10ns ∼ 0.7 V was achieved for 40nm devices, compared to 0.2V in single tunnel barrier devices.
Ruqiang Bao, Brian Greene, et al.
IEDM 2015
Guohan Hu, D. Kim, et al.
IEDM 2019
G. Hu, C. Safranski, et al.
IEDM 2022
Matthew Bright Sky, Norma Sosa, et al.
IEDM 2015