Replacement metal gate resistance in FinFET architecture modelling, validation and extendibility

Abstract

In this paper, we develop a multiplicative model to simulate the tungsten (W) film resistivity and gate resistance for replacement metal gate (RMG) with W electrode. Our multiplicative model predicts that TiN fill offers the lower gate resistance than TiN/W fill for highly scaled gate lengths. By absorbing the results from our model into the real RMG FinFET devices, we observe that TiN fill provides ∼6.4 % performance improvement compared to TiN/W fill. Meanwhile, the employment of gate conductance for gate stack film thickness monitoring is also described in our work.