Mario El Kazzi, Lukas Czornomaz, et al.
Applied Physics Letters
Metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated with amorphous Al2O3 and HfO 2/SiOx-Si gate stacks, grown by molecular beam deposition. As and In oxides were observed at the Al2O3/In0.17 Ga0.83 As interface, whereas no oxides were detected on the Si-passivated In0.17 Ga0.83 As surface after HfO2 deposition. Traces of As were found in both gate stacks. Si-passivated MOSFETs, with a drain current of 2.8× 103 μA/mm at Vg-Vt=2.0 V, Vd=1.0 V, Ion/Ioff =1× 107, and inverse subthreshold slope of 98-120 mV/decade, show superior performance with respect to devices without Si interlayer. © 2010 American Institute of Physics.
Mario El Kazzi, Lukas Czornomaz, et al.
Applied Physics Letters
Nicolas Daix, Emanuele Uccelli, et al.
APL Materials
Jens Hofrichter, Lukas Czornomaz, et al.
ECOC 2015
Lukas Czornomaz, Emanuele Uccelli, et al.
VLSI Technology 2015