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Conference paper
Strain loss in epitaxial Si: C films induced by phosphorus diffusion
Abstract
The influence of P diffusion on the thermal stability of epitaxial Si films has been studied. P diffusion is shown to greatly contribute to the strain loss in epitaxial Si films. It is proposed that the strain loss is mainly caused by the interaction of Si interstitial atoms injected by P diffusion with substitutional C atoms, driving them to non-substitutional lattice sites. ©The Electrochemical Society.