Spectral response of photocurrents in the MOST and the dependence on gate and substrate bias

Abstract

An experimental study has been made of the spectral response of photocurrents in the n-channel Si MOS transistor, including the effects of temperature and applied voltages. It is found that the photoresponse may be enhanced over the entire spectral range by the application of a gate or substrate bias voltage. Of particular interest, however, is that the response at short wavelengths (λ≲0.6 μ) undergoes a considerably greater relative increase than that over the remainder of the spectrum. This tendency is most pronounced in the case of an applied substrate bias.