J.A. Barker, D. Henderson, et al.
Molecular Physics
We report a new technique of using a floating-gate capacitive structure to measure the electrochemical potential difference between a reference conductor and the material in question as a function of some external parameter. It is illustrated by measurements on two two-dimensional systems: Si metal-oxide-semiconductor structures and (Ga,Al)As heterostructures. © 1986 The American Physical Society.
J.A. Barker, D. Henderson, et al.
Molecular Physics
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989