Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011
We report a new technique of using a floating-gate capacitive structure to measure the electrochemical potential difference between a reference conductor and the material in question as a function of some external parameter. It is illustrated by measurements on two two-dimensional systems: Si metal-oxide-semiconductor structures and (Ga,Al)As heterostructures. © 1986 The American Physical Society.
Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011
David B. Mitzi
Journal of Materials Chemistry
T.N. Morgan
Semiconductor Science and Technology
J.C. Marinace
JES