G.V.Subba Rao, J.C. Tsang
Materials Research Bulletin
The structure of a strain relief region between a Si substrate and a low dislocation density Ge film has been measured by Raman spectroscopy. The composition of the structure has been determined with ≅1000 Å resolution in the growth direction, and the upper portions shown to be largely relaxed. The presence of microscopic inhomogeneities in these alloys is suggested.
G.V.Subba Rao, J.C. Tsang
Materials Research Bulletin
P.M. Mooney, T.A. Kennedy, et al.
Physica B+C
J.C. Tsang, G.S. Oehrlein, et al.
Applied Physics Letters
J.A. Kash, J.C. Tsang, et al.
CICC 1997