Simulation analysis of series resistance for SOI MOSFET in nanometer regime

Abstract

In this work, we simulated silicon-on-insulator (SOI) transistors with a design targeting for 45nm NFET. A detailed simulation and analysis of the series resistance (Rs) is performed to study the impact of the halo or extension dose, position and grading on Rs. It is shown that Rs depends on junction grading. Changing halo position appears to improve SCE without degrading Rs, while higher halo dose does degrade Rs due to halo compensating the extension doping.