Rubab Ume, Haibo Gong, et al.
Journal of Applied Physics
Silicide engineering for high-performance CMOS logic devices is challenged by aggressive scaling of critical dimensions, new high-performance elements, and requirements of morphological stability. While NiSi can satisfy many of the integration challenges, incorporating Pt forms a more robust [Ni xPt(1-x)Si and improves morphological stability. In light of the challenges created by performance enablers, we review our latest results indicating whether a replacement for NiPt(1-x)Si is needed and highlight our investigations into alternative silicide materials such as Er, Yb, and Ir. We also discuss the architecture and performance needs beyond 32nm technology. © The Electrochemical Society.
Rubab Ume, Haibo Gong, et al.
Journal of Applied Physics
Cyril Cabral, Christian Lavoie, et al.
JVSTA
Conal E. Murray, Zhen Zhang, et al.
Journal of Applied Physics
Zhen Zhang, Shi Li Zhang, et al.
Applied Physics Letters