Frank Stem
C R C Critical Reviews in Solid State Sciences
Electrostatic discharge (ESD) performance of a shallow-trench-isolation double-diode protection circuit in CMOS technology is discussed. This paper highlights the sensitivities of these devices to semiconductor process parameters, interaction with chip circuitry and advanced failure analysis techniques. © 1993.
Frank Stem
C R C Critical Reviews in Solid State Sciences
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MRS Spring 2000
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