Hiroshi Ito, Reinhold Schwalm
JES
Lateral trench photodetectors (LTD) on silicon-on-insulator (SOI) have been fabricated using a fully CMOS compatible process. High speed (2.0 GHz), high quantum efficiency (51%), and excellent frequency response characteristics have been achieved at 851 nm with a supply voltage of only 3.3 V.
Hiroshi Ito, Reinhold Schwalm
JES
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
J.C. Marinace
JES
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters