Revanth Kodoru, Atanu Saha, et al.
arXiv
Lateral trench photodetectors (LTD) on silicon-on-insulator (SOI) have been fabricated using a fully CMOS compatible process. High speed (2.0 GHz), high quantum efficiency (51%), and excellent frequency response characteristics have been achieved at 851 nm with a supply voltage of only 3.3 V.
Revanth Kodoru, Atanu Saha, et al.
arXiv
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials