PaperSelf-compensation-limited conductivity in binary semiconductors. III. Expected correlations with fundamental parametersG. Mandel, F.F. Morehead, et al.Physical Review
PaperModel for the formation of amorphous Si by ion bombardmentF.F. Morehead, B.L. CrowderRadiation Effects
PaperFormation of amorphous silicon by ion bombardment as a function of ion, temperature, and doseF.F. Morehead, B.L. Crowder, et al.Journal of Applied Physics
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