Conference paper
RAPID ANNEALING OF SILICON.
R.T. Hodgson, V.R. Deline, et al.
MRS Proceedings 1983
Experimental results on the diffusion of Zn in GaAs which could not be satisfactorily explained in terms of a Frank-Turnbull mechanism involving vacancies can be understood with a "kick-out model" in which the equilibrium between interstitial and substitutional Zn is established via gallium interstitials.
R.T. Hodgson, V.R. Deline, et al.
MRS Proceedings 1983
F.F. Morehead, R.F. Lever
Applied Physics Letters
F.F. Morehead, N.A. Stolwijk, et al.
Applied Physics Letters
M.Y. Tsai, F.F. Morehead, et al.
Journal of Applied Physics