PaperExact description and data fitting of ion-implanted dopant profile evolution during annealingR. Ghez, G.S. Oehrlein, et al.Applied Physics Letters
PaperEfficient electroluminescence from p-n junctions in CdTe at 77°KG. Mandel, F.F. MoreheadApplied Physics Letters
PaperBoron diffusion in silicon at high concentrationsW.A. Orr Arienzo, R. Glang, et al.Journal of Applied Physics
PaperEfficient injection electroluminescence in znte by avalanche breakdownB.L. Crowder, F.F. Morehead, et al.Applied Physics Letters
