Semimetallic InAs-GaSb superlattices to the heterojunction limit

Abstract

Superlattices of InAs-GaSb have been investigated with layer thicknesses ranging from the onset of the semiconductor-semimetal transition (<100 Å) to the heterojunction limit (≳1000 Å). Pronounced Shubnikov-de Haas osicillations have been observed throughout the entire semimetallic regime which are shown to be associated with the ground-electron sub-bands, yielding energies of the Fermi level in agreement with those calculated from electron transfers.