Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
We report magnetotransport measurements, down to 0.050 K and up to 20 T, in two-dimensional systems with dilute and dense electron densities. The emphasis is on the latter regime, where the Hall resistance shows quantization for level filling factors at =43 and 53, and the magnetoresistance presents well-defined structures at =73 and 83. These results indicate that the fractional quantum Hall effect is a general phenomenon not restricted to the lowest-orbital Landau level. © 1984 The American Physical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Sung Ho Kim, Oun-Ho Park, et al.
Small
A. Krol, C.J. Sher, et al.
Surface Science
Lawrence Suchow, Norman R. Stemple
JES